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DMP3056LVT-7 Datasheet

DMP3056LVT-7 Cover
DatasheetDMP3056LVT-7
File Size501.81 KB
Total Pages6
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts DMP3056LVT-7, DMP3056LVT-13, DMP3056L-13, DMP3056L-7
Description MOSFET P-CH 30V TSOT-26, MOSFET P-CH 30V TSOT-26, MOSFET P-CH 30V 4.3A SOT23, MOSFET P-CH 30V 4.3A SOT23

DMP3056LVT-7 - Diodes Incorporated

DMP3056LVT-7 Datasheet Page 1
DMP3056LVT-7 Datasheet Page 2
DMP3056LVT-7 Datasheet Page 3
DMP3056LVT-7 Datasheet Page 4
DMP3056LVT-7 Datasheet Page 5
DMP3056LVT-7 Datasheet Page 6

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DMP3056L-7 DMP3056L-7 Diodes Incorporated MOSFET P-CH 30V 4.3A SOT23 179189

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URL Link

DMP3056LVT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

642pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.38W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

-

Supplier Device Package

-

Package / Case

-

DMP3056LVT-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

642pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.38W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

-

Supplier Device Package

-

Package / Case

-

DMP3056L-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

642pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.38W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

DMP3056L-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

642pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.38W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3