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| Datasheet | DMP56D0UFB-7 |
| File Size | 525.84 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMP56D0UFB-7, DMP56D0UFB-7B |
| Description | MOSFET P-CH 50V 200MA 3DFN, MOSFET P-CH 50V 200MA 3DFN |
DMP56D0UFB-7 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 4V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.58nC @ 4V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 50.54pF @ 25V FET Feature - Power Dissipation (Max) 425mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-DFN1006 (1.0x0.6) Package / Case 3-UFDFN |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 4V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.58nC @ 4V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 50.54pF @ 25V FET Feature - Power Dissipation (Max) 425mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-DFN1006 (1.0x0.6) Package / Case 3-UFDFN |