
Datasheet | DMP6110SVTQ-7 |
File Size | 453.77 KB |
Total Pages | 7 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | DMP6110SVTQ-7, DMP6110SVTQ-13 |
Description | MOSFET BVDSS: 41V 60V TSOT26, MOSFET BVDSS: 41V 60V TSOT26 |
DMP6110SVTQ-7 - Diodes Incorporated







The Products You May Be Interested In
![]() |
DMP6110SVTQ-7 | Diodes Incorporated | MOSFET BVDSS: 41V 60V TSOT26 | 364 More on Order |
![]() |
DMP6110SVTQ-13 | Diodes Incorporated | MOSFET BVDSS: 41V 60V TSOT26 | 212 More on Order |
URL Link
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 105mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 969pF @ 30V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 105mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 969pF @ 30V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6 |