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| Datasheet | DMT10H014LSS-13 |
| File Size | 415.84 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMT10H014LSS-13 |
| Description | MOSFET NCH 100V 8.9A 8SO |
DMT10H014LSS-13 - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/DMT10H014LSS-13
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Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1871pF @ 50V FET Feature - Power Dissipation (Max) 1.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |