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Datasheet | DMT3011LDT-7 |
File Size | 852.47 KB |
Total Pages | 11 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | DMT3011LDT-7 |
Description | MOSFET 2N-CH 30V 8A V-DFN3030-8 |
DMT3011LDT-7 - Diodes Incorporated
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DMT3011LDT-7 | Diodes Incorporated | MOSFET 2N-CH 30V 8A V-DFN3030-8 | 241 More on Order |
URL Link
www.oemstron.com/datasheet/DMT3011LDT-7
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A, 10.7A Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 641pF @ 15V Power - Max 1.9W Operating Temperature -55°C ~ 155°C (TJ) Mounting Type Surface Mount Package / Case 8-VDFN Exposed Pad Supplier Device Package V-DFN3030-8 (Type K) |