![DMT32M5LFG-7 Cover](http://media.oemstron.com/oemstron/datasheet/sm/dmt32m5lfg-7-0001.jpg)
Datasheet | DMT32M5LFG-7 |
File Size | 284.15 KB |
Total Pages | 7 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | DMT32M5LFG-7, DMT32M5LFG-13 |
Description | MOSFET N-CH 30V 30A POWERDI3333, MOSFET N-CH 30V 30A POWERDI3333 |
DMT32M5LFG-7 - Diodes Incorporated
![DMT32M5LFG-7 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/dmt32m5lfg-7-0001.jpg)
![DMT32M5LFG-7 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/dmt32m5lfg-7-0002.jpg)
![DMT32M5LFG-7 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/dmt32m5lfg-7-0003.jpg)
![DMT32M5LFG-7 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/dmt32m5lfg-7-0004.jpg)
![DMT32M5LFG-7 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/dmt32m5lfg-7-0005.jpg)
![DMT32M5LFG-7 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/dmt32m5lfg-7-0006.jpg)
![DMT32M5LFG-7 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/dmt32m5lfg-7-0007.jpg)
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URL Link
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 67.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4066pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 67.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4066pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |