Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMT8012LSS-13 |
| File Size | 533.17 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMT8012LSS-13 |
| Description | MOSFET N-CHA 80V 9.7A SO8 |
DMT8012LSS-13 - Diodes Incorporated
The Products You May Be Interested In
 |
DMT8012LSS-13 | Diodes Incorporated | MOSFET N-CHA 80V 9.7A SO8 | 120 More on Order |
URL Link
www.oemstron.com/datasheet/DMT8012LSS-13
|
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 16.5mOhm @ 12A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1949pF @ 40V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |