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DMTH10H010LCT Datasheet

DMTH10H010LCT Cover
DatasheetDMTH10H010LCT
File Size382.68 KB
Total Pages6
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMTH10H010LCT
Description MOSFET 100V 108A TO220AB

DMTH10H010LCT - Diodes Incorporated

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DMTH10H010LCT DMTH10H010LCT Diodes Incorporated MOSFET 100V 108A TO220AB 359

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URL Link

DMTH10H010LCT

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

108A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2592pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 166W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3