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| Datasheet | DSK10E-ET1 |
| File Size | 28.67 KB |
| Total Pages | 3 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 11 part numbers |
| Associated Parts | DSK10E-ET1, DSK10E-BT, DSK10E-AT1, DSK10C-ET1, DSK10C-BT, DSK10C-AT1, DSK10B-BT, DSK10B-AT1, DSK10E, DSK10C, DSK10B |
| Description | DIODE GEN PURP 400V 1A AXIAL, DIODE GEN PURP 400V 1A AXIAL, DIODE GEN PURP 400V 1A AXIAL, DIODE GEN PURP 200V 1A AXIAL, DIODE GEN PURP 200V 1A AXIAL |
DSK10E-ET1 - ON Semiconductor
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DSK10E-BT | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | 163 More on Order |
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DSK10E-AT1 | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | 376 More on Order |
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DSK10C-ET1 | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | 132 More on Order |
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DSK10C-BT | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | 306 More on Order |
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DSK10B-BT | ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | 394 More on Order |
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DSK10B-AT1 | ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | 162 More on Order |
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URL Link
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Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |