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DTD113ZUT106 Datasheet

DTD113ZUT106 Cover
DatasheetDTD113ZUT106
File Size1,042.44 KB
Total Pages7
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DTD113ZUT106
Description TRANS PREBIAS NPN 200MW UMT3

DTD113ZUT106 - Rohm Semiconductor

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DTD113ZUT106 DTD113ZUT106 Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3 485

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URL Link

DTD113ZUT106

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

82 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

UMT3