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ECH8601M-TL-H-P Datasheet

ECH8601M-TL-H-P Cover
DatasheetECH8601M-TL-H-P
File Size303.09 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts ECH8601M-TL-H-P, ECH8601M-TL-H
Description MOSFET 2N-CH, MOSFET N-CH 24V 8A ECH8

ECH8601M-TL-H-P - ON Semiconductor

ECH8601M-TL-H-P Datasheet Page 1
ECH8601M-TL-H-P Datasheet Page 2
ECH8601M-TL-H-P Datasheet Page 3
ECH8601M-TL-H-P Datasheet Page 4
ECH8601M-TL-H-P Datasheet Page 5
ECH8601M-TL-H-P Datasheet Page 6
ECH8601M-TL-H-P Datasheet Page 7

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URL Link

ECH8601M-TL-H-P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate, 2.5V Drive

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Rds On (Max) @ Id, Vgs

23mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

8-ECH

ECH8601M-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate, 2.5V Drive

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Rds On (Max) @ Id, Vgs

23mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

8-ECH