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EMD12T2R Datasheet

EMD12T2R Cover
DatasheetEMD12T2R
File Size600.5 KB
Total Pages8
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts EMD12T2R, UMD12NTR
Description TRANS NPN/PNP PREBIAS 0.15W EMT6, TRANS NPN/PNP PREBIAS 0.15W UMT6

EMD12T2R - Rohm Semiconductor

EMD12T2R Datasheet Page 1
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The Products You May Be Interested In

EMD12T2R EMD12T2R Rohm Semiconductor TRANS NPN/PNP PREBIAS 0.15W EMT6 258

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UMD12NTR UMD12NTR Rohm Semiconductor TRANS NPN/PNP PREBIAS 0.15W UMT6 7487

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URL Link

EMD12T2R

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

EMT6

UMD12NTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

UMT6