Semiconductors
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Optoelectronics
| Datasheet | EPC2021ENGR |
| File Size | 1,212.07 KB |
| Total Pages | 6 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | EPC2021ENGR, EPC2021 |
| Description | TRANS GAN 80V 60A BUMPED DIE, GANFET TRANS 80V 90A BUMPED DIE |
EPC2021ENGR - EPC
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EPC2021ENGR | EPC | TRANS GAN 80V 60A BUMPED DIE | 480 More on Order |
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Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 60A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 2.5mOhm @ 29A, 5V Vgs(th) (Max) @ Id 2.5V @ 14mA Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |
Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 90A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 2.5mOhm @ 29A, 5V Vgs(th) (Max) @ Id 2.5V @ 14mA Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 40V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |