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| Datasheet | EPC2033 |
| File Size | 1,504.42 KB |
| Total Pages | 6 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | EPC2033 |
| Description | GAN TRANS 150V 7MOHM BUMPED DIE |
EPC2033 - EPC
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EPC2033 | EPC | GAN TRANS 150V 7MOHM BUMPED DIE | 5389 More on Order |
URL Link
www.oemstron.com/datasheet/EPC2033
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Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 75V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |