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| Datasheet | EPC2102ENG |
| File Size | 1,674.61 KB |
| Total Pages | 7 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | EPC2102ENG, EPC2102ENGRT, EPC2102 |
| Description | GAN TRANS 2N-CH 60V BUMPED DIE, GANFET 2 N-CHANNEL 60V 23A DIE, GAN TRANS SYMMETRICAL HALF BRIDG |
EPC2102ENG - EPC
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Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 23A Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 23A (Tj) Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 23A Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |