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| Datasheet | EPC2105ENG |
| File Size | 2,210.08 KB |
| Total Pages | 9 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | EPC2105ENG, EPC2105ENGRT |
| Description | GAN TRANS 2N-CH 80V BUMPED DIE, GANFET 2NCH 80V 9.5A DIE |
EPC2105ENG - EPC
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Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 9.5A, 38A Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 9.5A Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |