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| Datasheet | EPC2108 |
| File Size | 2,556.05 KB |
| Total Pages | 10 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | EPC2108 |
| Description | GANFET 3 N-CH 60V/100V 9BGA |
EPC2108 - EPC
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EPC2108 | EPC | GANFET 3 N-CH 60V/100V 9BGA | 3881 More on Order |
URL Link
www.oemstron.com/datasheet/EPC2108
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Manufacturer EPC Series eGaN® FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 60V, 100V Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA Rds On (Max) @ Id, Vgs 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 22pF @ 30V, 7pF @ 30V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 9-VFBGA Supplier Device Package 9-BGA (1.35x1.35) |