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| Datasheet | EPC2110 |
| File Size | 1,445.13 KB |
| Total Pages | 7 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | EPC2110, EPC2110ENGRT |
| Description | GANFET 2NCH 120V 3.4A DIE, GAN TRANS 2N-CH 120V BUMPED DIE |
EPC2110 - EPC
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Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Dual) Common Source FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 3.4A Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V Vgs(th) (Max) @ Id 2.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type - Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Dual) Common Source FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 3.4A Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V Vgs(th) (Max) @ Id 2.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |