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| Datasheet | EPC8009 |
| File Size | 1,413.25 KB |
| Total Pages | 7 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | EPC8009 |
| Description | GANFET TRANS 65V 2.7A BUMPED DIE |
EPC8009 - EPC
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EPC8009 | EPC | GANFET TRANS 65V 2.7A BUMPED DIE | 426 More on Order |
URL Link
www.oemstron.com/datasheet/EPC8009
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Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 65V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 130mOhm @ 500mA, 5V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.45nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 52pF @ 32.5V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |