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| Datasheet | FCB36N60NTM |
| File Size | 736.28 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FCB36N60NTM |
| Description | MOSFET N-CH 600V 36A D2PAK |
FCB36N60NTM - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/FCB36N60NTM
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Manufacturer ON Semiconductor Series SupreMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4785pF @ 100V FET Feature - Power Dissipation (Max) 312W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |