Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

FCD5N60TF Datasheet

FCD5N60TF Cover
DatasheetFCD5N60TF
File Size430.5 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts FCD5N60TF, FCU5N60TU, FCD5N60TM-WS, FCD5N60TM
Description MOSFET N-CH 600V 4.6A DPAK, MOSFET N-CH 600V 4.6A I-PAK, MOSFET N-CH 600V 4.6A DPAK, MOSFET N-CH 600V 4.6A DPAK

FCD5N60TF - ON Semiconductor

FCD5N60TF Datasheet Page 1
FCD5N60TF Datasheet Page 2
FCD5N60TF Datasheet Page 3
FCD5N60TF Datasheet Page 4
FCD5N60TF Datasheet Page 5
FCD5N60TF Datasheet Page 6
FCD5N60TF Datasheet Page 7
FCD5N60TF Datasheet Page 8

The Products You May Be Interested In

FCD5N60TF FCD5N60TF ON Semiconductor MOSFET N-CH 600V 4.6A DPAK 254

More on Order

FCU5N60TU FCU5N60TU ON Semiconductor MOSFET N-CH 600V 4.6A I-PAK 181

More on Order

FCD5N60TM-WS FCD5N60TM-WS ON Semiconductor MOSFET N-CH 600V 4.6A DPAK 6353

More on Order

FCD5N60TM FCD5N60TM ON Semiconductor MOSFET N-CH 600V 4.6A DPAK 3816

More on Order

URL Link

FCD5N60TF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 25V

FET Feature

-

Power Dissipation (Max)

54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FCU5N60TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 25V

FET Feature

-

Power Dissipation (Max)

54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

FCD5N60TM-WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 25V

FET Feature

-

Power Dissipation (Max)

54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FCD5N60TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 25V

FET Feature

-

Power Dissipation (Max)

54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63