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| Datasheet | FCP150N65F |
| File Size | 1,680.74 KB |
| Total Pages | 12 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FCP150N65F |
| Description | MOSFET N-CH 650V 24A TO220 |
FCP150N65F - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/FCP150N65F
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Manufacturer ON Semiconductor Series HiPerFET™, Polar™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3737pF @ 100V FET Feature - Power Dissipation (Max) 298W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |