Datasheet | FCP260N65S3 |
File Size | 356.73 KB |
Total Pages | 10 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | FCP260N65S3 |
Description | MOSFET N-CH 650V 260MOHM TO220 |
FCP260N65S3 - ON Semiconductor
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FCP260N65S3 | ON Semiconductor | MOSFET N-CH 650V 260MOHM TO220 | 427 More on Order |
URL Link
www.oemstron.com/datasheet/FCP260N65S3
ON Semiconductor Manufacturer ON Semiconductor Series SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 260mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 400V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |