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| Datasheet | FCPF1300N80ZYD |
| File Size | 760.81 KB |
| Total Pages | 11 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FCPF1300N80ZYD, FCPF1300N80Z |
| Description | MOSFET N-CH 800V 4A TO220F, MOSFET N-CH 800V 4A TO220F |
FCPF1300N80ZYD - ON Semiconductor
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Manufacturer ON Semiconductor Series SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 880pF @ 100V FET Feature - Power Dissipation (Max) 24W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F-3 (Y-Forming) Package / Case TO-220-3 Full Pack, Formed Leads |
Manufacturer ON Semiconductor Series SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 880pF @ 100V FET Feature - Power Dissipation (Max) 24W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |