Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FCPF600N60Z |
| File Size | 810.63 KB |
| Total Pages | 11 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FCPF600N60Z, FCP600N60Z |
| Description | MOSFET N CH 600V 7.4A TO-220F, MOSFET N CH 600V 7.4A TO-220F |
FCPF600N60Z - ON Semiconductor
The Products You May Be Interested In
 |
FCPF600N60Z | ON Semiconductor | MOSFET N CH 600V 7.4A TO-220F | 389 More on Order |
 |
FCP600N60Z | ON Semiconductor | MOSFET N CH 600V 7.4A TO-220F | 1663 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V FET Feature - Power Dissipation (Max) 89W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V FET Feature - Power Dissipation (Max) 89W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |