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FCPF9N60NTYDTU Datasheet

FCPF9N60NTYDTU Cover
DatasheetFCPF9N60NTYDTU
File Size755.78 KB
Total Pages12
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts FCPF9N60NTYDTU, FCP9N60N, FCPF9N60NT
Description MOSFET N-CH 600V 9A TO220F, MOSFET N-CH 600V 9A TO220, MOSFET N-CH 600V 9A TO220F

FCPF9N60NTYDTU - ON Semiconductor

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URL Link

FCPF9N60NTYDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SupreMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

385mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1240pF @ 100V

FET Feature

-

Power Dissipation (Max)

29.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3 (Y-Forming)

Package / Case

TO-220-3 Full Pack, Formed Leads

FCP9N60N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

385mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1240pF @ 100V

FET Feature

-

Power Dissipation (Max)

83.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

FCPF9N60NT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

385mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1240pF @ 100V

FET Feature

-

Power Dissipation (Max)

29.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack