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| Datasheet | FDB0165N807L |
| File Size | 373.34 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDB0165N807L |
| Description | MOSFET N-CH 80V 310A TO263 |
FDB0165N807L - ON Semiconductor
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FDB0165N807L | ON Semiconductor | MOSFET N-CH 80V 310A TO263 | 1371 More on Order |
URL Link
www.oemstron.com/datasheet/FDB0165N807L
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 310A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 36A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 304nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23660pF @ 40V FET Feature - Power Dissipation (Max) 3.8W (Ta), 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |