Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

FDB16AN08A0 Datasheet

FDB16AN08A0 Cover
DatasheetFDB16AN08A0
File Size1,052.39 KB
Total Pages14
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDB16AN08A0
Description MOSFET N-CH 75V 58A TO-263AB

FDB16AN08A0 - ON Semiconductor

FDB16AN08A0 Datasheet Page 1
FDB16AN08A0 Datasheet Page 2
FDB16AN08A0 Datasheet Page 3
FDB16AN08A0 Datasheet Page 4
FDB16AN08A0 Datasheet Page 5
FDB16AN08A0 Datasheet Page 6
FDB16AN08A0 Datasheet Page 7
FDB16AN08A0 Datasheet Page 8
FDB16AN08A0 Datasheet Page 9
FDB16AN08A0 Datasheet Page 10
FDB16AN08A0 Datasheet Page 11
FDB16AN08A0 Datasheet Page 12
FDB16AN08A0 Datasheet Page 13
FDB16AN08A0 Datasheet Page 14

The Products You May Be Interested In

FDB16AN08A0 FDB16AN08A0 ON Semiconductor MOSFET N-CH 75V 58A TO-263AB 118

More on Order

URL Link

FDB16AN08A0

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 58A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1857pF @ 25V

FET Feature

-

Power Dissipation (Max)

135W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB