![FDB6021P Cover](http://media.oemstron.com/oemstron/datasheet/sm/fdb6021p-0001.jpg)
Datasheet | FDB6021P |
File Size | 137.36 KB |
Total Pages | 5 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | FDB6021P |
Description | MOSFET P-CH 20V 28A TO-263AB |
FDB6021P - ON Semiconductor
![FDB6021P Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/fdb6021p-0001.jpg)
![FDB6021P Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/fdb6021p-0002.jpg)
![FDB6021P Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/fdb6021p-0003.jpg)
![FDB6021P Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/fdb6021p-0004.jpg)
![FDB6021P Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/fdb6021p-0005.jpg)
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FDB6021P | ON Semiconductor | MOSFET P-CH 20V 28A TO-263AB | 134 More on Order |
URL Link
www.oemstron.com/datasheet/FDB6021P
Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 28A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 30mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 10V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |