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| Datasheet | FDB8870 |
| File Size | 531.16 KB |
| Total Pages | 13 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDB8870 |
| Description | MOSFET N-CH 30V 23A TO-263AB |
FDB8870 - ON Semiconductor
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FDB8870 | ON Semiconductor | MOSFET N-CH 30V 23A TO-263AB | 117 More on Order |
URL Link
www.oemstron.com/datasheet/FDB8870
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.9mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 15V FET Feature - Power Dissipation (Max) 160W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |