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FDC6312P Datasheet

FDC6312P Cover
DatasheetFDC6312P
File Size206.35 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDC6312P
Description MOSFET 2P-CH 20V 2.3A SSOT-6

FDC6312P - ON Semiconductor

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FDC6312P FDC6312P ON Semiconductor MOSFET 2P-CH 20V 2.3A SSOT-6 111114

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URL Link

FDC6312P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A

Rds On (Max) @ Id, Vgs

115mOhm @ 2.3A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

467pF @ 10V

Power - Max

700mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

SuperSOT™-6