Datasheet | FDC633N_F095 |
File Size | 285.54 KB |
Total Pages | 5 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | FDC633N_F095, FDC633N |
Description | MOSFET N-CH 30V 5.2A 6-SSOT, MOSFET N-CH 30V 5.2A SSOT-6 |
FDC633N_F095 - ON Semiconductor
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FDC633N_F095 | ON Semiconductor | MOSFET N-CH 30V 5.2A 6-SSOT | 256 More on Order |
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ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 42mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 538pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 42mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 538pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6 |