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| Datasheet | FDC6561AN |
| File Size | 191.48 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDC6561AN |
| Description | MOSFET 2N-CH 30V 2.5A SSOT6 |
FDC6561AN - ON Semiconductor
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FDC6561AN | ON Semiconductor | MOSFET 2N-CH 30V 2.5A SSOT6 | 37300 More on Order |
URL Link
www.oemstron.com/datasheet/FDC6561AN
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Manufacturer ON Semiconductor Series PowerTrench® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A Rds On (Max) @ Id, Vgs 95mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V Power - Max 700mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package SuperSOT™-6 |