Datasheet | FDC699P_F077 |
File Size | 162.45 KB |
Total Pages | 6 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | FDC699P_F077, FDC699P |
Description | MOSFET P-CH 20V 7A 6-SSOT, MOSFET P-CH 20V 7A SSOT-6 |
FDC699P_F077 - ON Semiconductor
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ON Semiconductor Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2640pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 FLMP Package / Case 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
ON Semiconductor Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2640pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 FLMP Package / Case 6-SSOT Flat-lead, SuperSOT™-6 FLMP |