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| Datasheet | FDD2670 |
| File Size | 682.12 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDD2670 |
| Description | MOSFET N-CH 200V 3.6A D-PAK |
FDD2670 - ON Semiconductor
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FDD2670 | ON Semiconductor | MOSFET N-CH 200V 3.6A D-PAK | 4177 More on Order |
URL Link
www.oemstron.com/datasheet/FDD2670
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1228pF @ 100V FET Feature - Power Dissipation (Max) 3.2W (Ta), 70W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |