![FDD3680 Cover](http://media.oemstron.com/oemstron/datasheet/sm/fdd3680-0001.jpg)
Datasheet | FDD3680 |
File Size | 389.05 KB |
Total Pages | 5 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | FDD3680 |
Description | MOSFET N-CH 100V 25A D-PAK |
FDD3680 - ON Semiconductor
![FDD3680 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/fdd3680-0001.jpg)
![FDD3680 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/fdd3680-0002.jpg)
![FDD3680 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/fdd3680-0003.jpg)
![FDD3680 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/fdd3680-0004.jpg)
![FDD3680 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/fdd3680-0005.jpg)
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FDD3680 | ON Semiconductor | MOSFET N-CH 100V 25A D-PAK | 128 More on Order |
URL Link
www.oemstron.com/datasheet/FDD3680
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 46mOhm @ 6.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 50V FET Feature - Power Dissipation (Max) 68W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |