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| Datasheet | FDD86110 |
| File Size | 490.32 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDD86110 |
| Description | MOSFET N-CH 100V 12.5A DPAK-3 |
FDD86110 - ON Semiconductor
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FDD86110 | ON Semiconductor | MOSFET N-CH 100V 12.5A DPAK-3 | 8722 More on Order |
URL Link
www.oemstron.com/datasheet/FDD86110
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 12.5A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 10.2mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2265pF @ 50V FET Feature - Power Dissipation (Max) 3.1W (Ta), 127W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |