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FDD86367 Datasheet

FDD86367 Cover
DatasheetFDD86367
File Size992.81 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDD86367
Description MOSFET N-CHANNEL 80V 100A TO252

FDD86367 - ON Semiconductor

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FDD86367 FDD86367 ON Semiconductor MOSFET N-CHANNEL 80V 100A TO252 465

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URL Link

FDD86367

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4840pF @ 40V

FET Feature

-

Power Dissipation (Max)

227W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63