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| Datasheet | FDFME2P823ZT |
| File Size | 355.31 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDFME2P823ZT |
| Description | MOSFET P-CH 20V 2.6A 6MICROFET |
FDFME2P823ZT - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/FDFME2P823ZT
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Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 142mOhm @ 2.3A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-MicroFET (1.6x1.6) Package / Case 6-UFDFN Exposed Pad |