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| Datasheet | FDI150N10 |
| File Size | 667.62 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDI150N10 |
| Description | MOSFET N-CH 100V 57A I2PAK |
FDI150N10 - ON Semiconductor
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FDI150N10 | ON Semiconductor | MOSFET N-CH 100V 57A I2PAK | 1776 More on Order |
URL Link
www.oemstron.com/datasheet/FDI150N10
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 57A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16mOhm @ 49A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4760pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |