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FDMS4D0N12C Datasheet

FDMS4D0N12C Cover
DatasheetFDMS4D0N12C
File Size251.86 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDMS4D0N12C
Description PTNG 120V N-FET PQFN56

FDMS4D0N12C - ON Semiconductor

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URL Link

FDMS4D0N12C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

18.5A (Ta), 114A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 67A, 10V

Vgs(th) (Max) @ Id

4V @ 370A

Gate Charge (Qg) (Max) @ Vgs

82nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6460pF @ 60V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 106W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN