Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FDN306P |
| File Size | 260.9 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDN306P |
| Description | MOSFET P-CH 12V 2.6A SSOT3 |
FDN306P - ON Semiconductor
The Products You May Be Interested In
 |
FDN306P | ON Semiconductor | MOSFET P-CH 12V 2.6A SSOT3 | 299498 More on Order |
URL Link
www.oemstron.com/datasheet/FDN306P
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 40mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1138pF @ 6V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT-3 Package / Case TO-236-3, SC-59, SOT-23-3 |