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| Datasheet | FDN357N |
| File Size | 297.7 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDN357N |
| Description | MOSFET N-CH 30V 1.9A SSOT3 |
FDN357N - ON Semiconductor
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FDN357N | ON Semiconductor | MOSFET N-CH 30V 1.9A SSOT3 | 58339 More on Order |
URL Link
www.oemstron.com/datasheet/FDN357N
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 235pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT-3 Package / Case TO-236-3, SC-59, SOT-23-3 |