Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FDN359BN |
| File Size | 215.64 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDN359BN |
| Description | MOSFET N-CH 30V 2.7A SSOT3 |
FDN359BN - ON Semiconductor
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FDN359BN | ON Semiconductor | MOSFET N-CH 30V 2.7A SSOT3 | 37882 More on Order |
URL Link
www.oemstron.com/datasheet/FDN359BN
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 46mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 15V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT-3 Package / Case TO-236-3, SC-59, SOT-23-3 |