![FDP020N06B-F102 Cover](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0001.jpg)
Datasheet | FDP020N06B-F102 |
File Size | 778.95 KB |
Total Pages | 11 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | FDP020N06B-F102 |
Description | MOSFET N-CH 60V 120A TO-220-3 |
FDP020N06B-F102 - ON Semiconductor
![FDP020N06B-F102 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0001.jpg)
![FDP020N06B-F102 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0002.jpg)
![FDP020N06B-F102 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0003.jpg)
![FDP020N06B-F102 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0004.jpg)
![FDP020N06B-F102 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0005.jpg)
![FDP020N06B-F102 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0006.jpg)
![FDP020N06B-F102 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0007.jpg)
![FDP020N06B-F102 Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0008.jpg)
![FDP020N06B-F102 Datasheet Page 9](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0009.jpg)
![FDP020N06B-F102 Datasheet Page 10](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0010.jpg)
![FDP020N06B-F102 Datasheet Page 11](http://media.oemstron.com/oemstron/datasheet/sm/fdp020n06b-f102-0011.jpg)
The Products You May Be Interested In
![]() |
FDP020N06B-F102 | ON Semiconductor | MOSFET N-CH 60V 120A TO-220-3 | 2030 More on Order |
URL Link
www.oemstron.com/datasheet/FDP020N06B-F102
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 268nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 20930pF @ 30V FET Feature - Power Dissipation (Max) 333W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |