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FDP020N06B-F102 Datasheet

FDP020N06B-F102 Cover
DatasheetFDP020N06B-F102
File Size778.95 KB
Total Pages11
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDP020N06B-F102
Description MOSFET N-CH 60V 120A TO-220-3

FDP020N06B-F102 - ON Semiconductor

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URL Link

FDP020N06B-F102

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

268nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

20930pF @ 30V

FET Feature

-

Power Dissipation (Max)

333W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3