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| Datasheet | FDP65N06 |
| File Size | 1,173.16 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDP65N06 |
| Description | MOSFET N-CH 60V 65A TO-220 |
FDP65N06 - ON Semiconductor
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FDP65N06 | ON Semiconductor | MOSFET N-CH 60V 65A TO-220 | 1817 More on Order |
URL Link
www.oemstron.com/datasheet/FDP65N06
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Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 65A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 25V FET Feature - Power Dissipation (Max) 135W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |