Datasheet | FDPF20N50 |
File Size | 776.04 KB |
Total Pages | 12 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | FDPF20N50, FDPF20N50T, FDP20N50 |
Description | MOSFET N-CH 500V 20A TO-220F, MOSFET N-CH 500V 20A TO-220F, MOSFET N-CH 500V 20A TO-220 |
FDPF20N50 - ON Semiconductor
The Products You May Be Interested In
FDPF20N50 | ON Semiconductor | MOSFET N-CH 500V 20A TO-220F | 1599 More on Order |
|
FDPF20N50T | ON Semiconductor | MOSFET N-CH 500V 20A TO-220F | 5133 More on Order |
|
FDP20N50 | ON Semiconductor | MOSFET N-CH 500V 20A TO-220 | 11873 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 59.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3120pF @ 25V FET Feature - Power Dissipation (Max) 38.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
ON Semiconductor Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 59.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3120pF @ 25V FET Feature - Power Dissipation (Max) 38.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
ON Semiconductor Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 59.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3120pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |