Datasheet | FDPF39N20TLDTU |
File Size | 626.55 KB |
Total Pages | 11 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | FDPF39N20TLDTU, FDP39N20, FDPF39N20 |
Description | MOSFET N-CH 200V 39A TO220F, MOSFET N-CH 200V 39A TO-220, MOSFET N-CH 200V 39A TO-220F |
FDPF39N20TLDTU - ON Semiconductor
The Products You May Be Interested In
FDPF39N20TLDTU | ON Semiconductor | MOSFET N-CH 200V 39A TO220F | 311 More on Order |
|
FDP39N20 | ON Semiconductor | MOSFET N-CH 200V 39A TO-220 | 411 More on Order |
|
FDPF39N20 | ON Semiconductor | MOSFET N-CH 200V 39A TO-220F | 2000 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 66mOhm @ 19.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 25V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
ON Semiconductor Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 66mOhm @ 19.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 25V FET Feature - Power Dissipation (Max) 251W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
ON Semiconductor Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 66mOhm @ 19.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 25V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |