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| Datasheet | FDS6162N3 |
| File Size | 189.14 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDS6162N3 |
| Description | MOSFET N-CH 20V 21A 8-SOIC |
FDS6162N3 - ON Semiconductor
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FDS6162N3 | ON Semiconductor | MOSFET N-CH 20V 21A 8-SOIC | 355 More on Order |
URL Link
www.oemstron.com/datasheet/FDS6162N3
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 21A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 4.5mOhm @ 21A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 73nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 5521pF @ 10V FET Feature - Power Dissipation (Max) 3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |