![FDS8670 Cover](http://media.oemstron.com/oemstron/datasheet/sm/fds8670-0001.jpg)
Datasheet | FDS8670 |
File Size | 1,807.33 KB |
Total Pages | 5 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | FDS8670 |
Description | MOSFET N-CH 30V 21A 8-SOIC |
FDS8670 - ON Semiconductor
![FDS8670 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/fds8670-0001.jpg)
![FDS8670 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/fds8670-0002.jpg)
![FDS8670 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/fds8670-0003.jpg)
![FDS8670 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/fds8670-0004.jpg)
![FDS8670 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/fds8670-0005.jpg)
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FDS8670 | ON Semiconductor | MOSFET N-CH 30V 21A 8-SOIC | 153 More on Order |
URL Link
www.oemstron.com/datasheet/FDS8670
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 21A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 21A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4040pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |